Insulated gate bipolar transistor and manufacturing method thereof
US11101373B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2019 |
| Grant date | Aug 24, 2021 |
| Priority date | — |
| Expiry date | Nov 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/107
Abstract
An insulated gate bipolar transistor includes: a semiconductor substrate; an emitter electrode arranged on one main surface of the semiconductor substrate; and a trench gate arranged in a rectangular trench having a rectangular shape and disposed on the one main surface of the semiconductor substrate. The semiconductor substrate includes a body contact region and an emitter region in a rectangular region surrounded by the rectangular trench. The rectangular trench has a straight trench that constitutes one side of the rectangular trench. The body contact region is in contact with a side of the straight trench. The emitter region is in contact with the side of the straight trench, and is adjacent to the body contact region. The body contact region has a protrusion portion protruding in a depth direction from a center portion of the body contact region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.