Semiconductor device and method for manufacturing the same
US11101386B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2018 |
| Grant date | Aug 24, 2021 |
| Priority date | — |
| Expiry date | Aug 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide; a first conductor and a second conductor over the oxide; a third conductor over the oxide; a first insulator provided between the oxide and the third conductor and covering a side surface of the third conductor; a second insulator over the third conductor and the first insulator; a third insulator positioned over the first conductor and at a side surface of the second insulator; a fourth insulator positioned over the second conductor and at a side surface of the second insulator; a fourth conductor being in contact with a top surface and a side surface of the third insulator and electrically connected to the first conductor; and a fifth conductor being in contact with a top surface and a side surface of the fourth insulator and electrically connected to the second conductor. The first insulator is between the third insulator and the third conductor, and between the fourth insulator and the third conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.