Efficient wide bandgap GaN-based LED chip based on surface plasmon effect and manufacturing method therefor

US11101406B2 · kind B2 · utility

Assignee

• South China University of Technology · CN

Inventors

• Huamao Huang · Tangxia, CN
• Hong Wang · 流花街道, CN
• Xiaolong Hu · Shandong, CN
• Zhuobo Yang · Tangxia, CN
• Rulian Wen · Longbeilingcun, CN
• Wei Shi · Tangxia, CN

Key dates

• Filing date: Dec 25, 2016
• Grant date: Aug 24, 2021
• Expiry date: Feb 7, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/819
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

An efficient wide bandgap GaN-based LED chip based on a surface plasmon effect and a manufacturing method therefor. The efficient wide bandgap GaN-based LED chip is of a flip-chip structure, and comprises, from bottom to top in sequence, a substrate, a buffer layer, an unintentionally doped GaN layer, an n-GaN layer, a quantum well layer, an electron blocking layer, a p-GaN layer, a metallic reflecting mirror layer, a passivation layer, a p-electrode layer, an n-electrode layer; and a position of a bottom surface of the metallic reflecting mirror layer connected to a surface of the p-GaN layer is provided with a micro-nano composite metal structure. A micro metal structure comprises alternating protrusion portions and recess portions; and a nano metal structure is distributed on an interface of the micro metal structure and the p-GaN layer.