Integrated global shutter image sensor
US11102429B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2019 |
| Grant date | Aug 24, 2021 |
| Priority date | — |
| Expiry date | Nov 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In one embodiment, an integrated image sensor includes an array of pixels in which each pixel includes a photosensitive area configured to integrate a luminous signal by generating electron-hole pairs so as to form a first signal representative of the number of electrons in the generated electron-hole pairs and a second signal representative of the number of holes in the generated electron-hole pairs. A first circuit portion is configured to store the first signal sheltered from light. A second circuit portion is configured to store the second signal sheltered from light. A third circuit portion is configured to read the first signal and the second signal and able to perform combination operations between the first signal and the second signal so as to generate a combined signal representative of an image, where the integrated image sensor is tailored to operate in a global shutter control mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.