Microbolometer structure
US11105684B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2016 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Apr 29, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/0806
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods, systems, and apparatus to manufacture a microbolometer detector in a standard CMOS foundry. The method includes forming a Complementary Metal Oxide Semiconductor (CMOS) wafer including a silicon substrate layer, a metal stack, a dielectric layer, and a thermoelectric conversion element embedded in the dielectric layer. The metal stack includes at least two metal layers in contact with each other. The metal stack and the dielectric layer are on the silicon substrate layer. The thermoelectric conversion element is configured to convert heat into an electrical signal. The method includes etching the metal stack to define exterior lateral edges of a microbolometer bridge including at least a portion of the dielectric layer and the thermoelectric conversion element embedded in the dielectric layer. The method includes etching the silicon substrate layer beneath the microbolometer bridge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.