Patent · US Active

Waveguide optoelectronic device

US11105975B2 · kind B2 · utility

1Cited by
125References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 1, 2017
Grant dateAug 31, 2021
Priority date
Expiry dateDec 1, 2037

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02F2202/06
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A waveguide optoelectronic device comprising a rib waveguide region, and method of manufacturing a rib waveguide region, the rib waveguide region having: a base of a first material, and a ridge extending from the base, at least a portion of the ridge being formed from a chosen semiconductor material which is different from the material of the base wherein the silicon base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; and wherein: a first doped region extends along: the first slab region and along a first sidewall of the ridge, the first sidewall contacting the first slab region; and a second doped region extends along: the second slab region and along a second sidewall of the ridge, the second sidewall contacting the second slab region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.