Spin-orbit torque magnetic memory device using alternating current
US11107513B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2020 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | May 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3254
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic memory according to one embodiment of the present invention comprises: a magnetic tunnel junction comprising a free layer, a reference layer, and a tunnel barrier layer disposed between the free layer and the reference layer; a first conductive line disposed adjacent to the free layer; and a second conductive line disposed adjacent to the free layer and intersecting the first conductive line. A magnetization switching method of the magnetic memory comprises the steps of: applying an alternating current-type first current having a first frequency to the first conductive line; and applying an alternating current-type second current having the first frequency to the second conductive line. The free layer performs magnetization reversal, using the first current and the second current, and the magnetic tunnel junction is disposed on an intersection point between the first conductive line and the second conductive line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.