Substrate treating method
US11107698B2 · kind B2 · utility
1Cited by
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5Claims
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Key dates
| Filing date | Oct 24, 2017 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Mar 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68742
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxygen concentration is lowered in accordance with a set lowering process, and thereafter a heat treatment is performed. Accordingly, the heat treatment is performed to a substrate W while the oxygen concentration in a heat treating space HS is lowered. Consequently, a treatment atmosphere within the heat treating space is able to be made suitable for a heat treatment process, leading to appropriate film deposition. In addition, the oxygen concentration is lowered in accordance with a concentration level in recipes. This avoids an excessively lowered oxygen concentration, leading to prevention of reduced throughput.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.