Power semiconductor module
US11107740B2 · kind B2 · utility
0Cited by
15References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2017 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Aug 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1304
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor module including at least one power semiconductor chip providing a power electronics switch; and a semiconductor wafer, to which the at least one power semiconductor chip is bonded; wherein the semiconductor wafer is doped, such that it includes a field blocking region and an electrically conducting region on the field blocking region, to which electrically conducting region the at least one power semiconductor chip is bonded.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.