Patent · US Active

Packaging for lateral high voltage GaN power devices

US11107755B2 · kind B2 · utility

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22Claims

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Inventors

Zhanming Li · West Vancouver, CA
Yue Fu · Coquitlam, CA
Yan-Fei Liu · Kingston, CA

Key dates

Filing date	May 10, 2020
Grant date	Aug 31, 2021
Priority date	—
Expiry date	May 10, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Packaging methods and structures for lateral high voltage gallium nitride (GaN) devices achieve electrical isolation while also maintaining thermal dissipation. The electrical isolation reduces or eliminates vertical leakage current, improving high voltage performance. The packages may use or be compatible standards such as JEDEC, which reduces packaging cost and facilitates implementation of the packaged devices in conventional circuit design approaches.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.