Semiconductor device and method for manufacturing the same, and power conversion device
US11107756B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2017 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | May 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02P27/08
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an insulating substrate, a semiconductor element, a conductor substrate, and a case member. The semiconductor element is connected above the insulating substrate, and the conductor substrate is connected above the semiconductor element. The case member surrounds a region overlapping with the insulating substrate, the semiconductor element, and the conductor substrate in plan view to avoid the region. A plurality of metal patterns are arranged on a main surface of an insulating layer. A groove is formed between a pair of adjacent metal patterns of the plurality of metal patterns. A through hole is formed in the conductor substrate at a position overlapping with the groove in plan view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.