Semiconductor device, electric power conversion apparatus and method for manufacturing semiconductor device
US11107760B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2019 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Jul 30, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02P27/08
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to the present invention, a semiconductor device includes an insulating substrate having an organic insulating layer and a circuit pattern provided on the organic insulating layer; and a semiconductor chip provided on an upper surface of the circuit pattern, wherein a thickness of the circuit pattern is not less than 1 mm and not more than 3 mm. According to the present invention, a method for manufacturing a semiconductor device includes forming a metal layer with a thickness not less than 1 mm and not more than 3 mm on an organic insulating layer; patterning the metal layer by machining processing to form a circuit pattern; and providing a semiconductor chip on an upper surface of the circuit pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.