Pixel and imaging array with reduced dark current adapted to low light imaging
US11107847B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2019 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Nov 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel sensor, an imaging array that includes such pixel sensors, and a method for operating an imaging array are disclosed. The pixel sensor includes a transfer gate that connects a photodiode to a floating diffusion node in response to a transfer signal, a reset circuit, and a controller. The reset circuit is adapted to apply either a first potential or a second potential to the floating diffusion node, the second potential being less than the first potential. The controller is configured to cause the reset circuit to apply the first potential to the floating diffusion node while the transfer gate is conducting just prior to a start of an accumulation phase, and then apply the second potential to the floating diffusion node after the transfer gate is rendered non-conducting, the second potential is less than the first potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.