Photoelectric conversion apparatus
US11107853B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2019 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Oct 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A photoelectric conversion apparatus includes a semiconductor substrate, first and second micro lenses, a first filter with a transmittance of infrared light, and a second filter with a transmittance of visible light. At least one photoelectric conversion portion disposed so as to overlap the first filter in a planar view and a plurality of photoelectric conversion portions disposed so as to overlap the second filter in the planar view each include a first semiconductor region and a second semiconductor region. An impurity concentration of at least a part of the second semiconductor region of the at least one photoelectric conversion portion is lower than an impurity concentration of a portion in the second semiconductor regions of the plurality of photoelectric conversion portions that is disposed at the same depth as the at least a part of the second semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.