Thin film transistor substrate having two different types of thin film transistors on the same substrate and display using the same
US11107870B2 · kind B2 · utility
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2References
19Claims
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Key dates
| Filing date | Dec 14, 2018 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Dec 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/80521
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate and a display using the same. A disclosed display device may include a substrate, a first thin film transistor including a first semiconductor layer having a polycrystalline semiconductor material on the substrate, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor material on the substrate. Both the first semiconductor layer and the second semiconductor layer may be disposed directly on a same underlying layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.