Semiconductor device and method for manufacturing same
US11107911B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2019 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Jan 16, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
Abstract
A semiconductor device includes an inversion type semiconductor element, which has: a substrate; a drift layer; a saturation current suppression layer; a current dispersion layer; a base region; a source region; a connection layer; a plurality of trench gate structures; an interlayer insulation film; a source electrode; and a drain electrode. A channel region is provided in a portion of the base region in contact with each trench gate structure by applying a gate voltage to the gate electrode and applying a normal operation voltage as a drain voltage to the drain electrode; and a current flows between the source electrode and the drain electrode through the source region and the JFET portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.