Oxide semiconductor film and method for producing same
US11107926B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2017 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Jun 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new and useful oxide semiconductor film with enhanced p-type semiconductor property and the method of manufacturing the oxide semiconductor film are provided. A method of manufacturing an oxide semiconductor film including: generating atomized droplets by atomizing a raw material solution containing a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table and a p-type dopant; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under oxygen atmosphere to form the oxide semiconductor film on the base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.