Photodiode
US11107938B2 · kind B2 · utility
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3References
25Claims
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Key dates
| Filing date | Feb 13, 2020 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Feb 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/933
Abstract
A photodiode include a first substrate layer of a first dopant type and a second substrate layer of a second dopant type on top of the first substrate layer. Semiconductor walls are provided in a semiconductor substrate which includes the first and second substrate layers. The semiconductor walls include: two outer semiconductor walls and at least one inside semiconductor wall positioned between the two outer semiconductor walls. Each inside semiconductor wall is located between two semiconductor walls having longer length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.