Vertical photodiode
US11107941B2 · kind B2 · utility
3Cited by
2References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2019 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Mar 5, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.