Light emitting chip and method of producing the same
US11107950B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2020 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Mar 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0362
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting chip includes a first-type semiconductor layer, a light emitting layer, and a second-type semiconductor layer which are disposed in such order, a passivation layer, and a current spreading layer. The second-type semiconductor layer and the light emitting layer cooperate to form a mesa structure which partially exposes the first-type semiconductor layer. The mesa structure has a lateral surface over which the passivation layer is disposed. The current spreading layer is disposed in contact with the second-type semiconductor layer. A distance between peripheries of a contact surface of the current spreading layer and a top surface of the second-type semiconductor layer is not greater than 5 μm. A method for producing the chip is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.