High power, double-sided thin film filter
US11108368B2 · kind B2 · utility
2Cited by
4References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2020 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Mar 14, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2001/0085
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high power thin film filter is disclosed includes a substrate having a substrate thickness in a Z-direction between a first surface and a second surface. A thin film capacitor may be formed over the first surface. A thin film inductor may be spaced apart from the thin film capacitor by at least the thickness of the substrate. A via may be formed in the substrate that electrically connects the thin film capacitor and the thin film inductor. The via may include a polymeric composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.