Methods and devices for microelectromechanical pressure sensors
US11111135B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2015 |
| Grant date | Sep 7, 2021 |
| Priority date | — |
| Expiry date | Jan 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2009/2442
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.