Atomic layer deposition of fluoride thin films
US11111578B1 · kind B1 · utility
2Cited by
88References
10Claims
0Family size
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Key dates
| Filing date | Feb 13, 2020 |
| Grant date | Sep 7, 2021 |
| Priority date | — |
| Expiry date | Feb 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/285
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A secondary electron emissive coating. The coating is formed by atomic layer deposition of CaF2 on a substrate by ALD half cycle exposure of an alkaline metal amidinate and ALD half cycle exposure of a fluorinated compound, where the deposition occurs at a reaction temperature greater than a highest sublimation temperature of the first metal precursor and the second metal precursor and less than 50° C. above the highest sublimation temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.