Deposition equipment and method of fabricating semiconductor device using the same
US11111579B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2019 |
| Grant date | Sep 7, 2021 |
| Priority date | — |
| Expiry date | Jul 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6719
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A deposition equipment is provided. The deposition equipment includes: a reaction chamber including an upper plate and a container body, the upper plate including a gas supplier for injecting a processing gas; a wafer chuck including an upper surface on which a wafer is loaded, in the reaction chamber, with the upper surface of the wafer chuck facing the upper plate; and a processing gas shielding section which prevents the processing gas from being adsorbed to the upper surface of the wafer chuck and is disposed between the upper plate and the wafer chuck in a state in which the wafer is removed from the wafer chuck. The processing gas shielding section includes a shutter which is plate-like, and the shutter includes a region including a gas discharge section for jetting a purging gas toward the wafer chuck.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.