Photoconductive detector device with plasmonic electrodes
US11112305B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2017 |
| Grant date | Sep 7, 2021 |
| Priority date | — |
| Expiry date | Oct 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A photoconductive device that includes a semiconductor substrate, an antenna assembly, and a photoconductive assembly with one or more plasmonic contact electrodes. The photoconductive assembly can be provided with plasmonic contact electrodes that are arranged on the semiconductor substrate in a manner that improves the quantum efficiency of the photoconductive device by plasmonically enhancing the pump absorption into the photo-absorbing regions of semiconductor substrate. In one exemplary embodiment, the photoconductive device is arranged as a photoconductive source and is pumped at telecom pump wavelengths (e.g., 1.0-1.6 μm) and produces milliwatt-range power levels in the terahertz (THz) frequency range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.