Patent · US Active

Ceramic dielectric and method of manufacturing the same and ceramic electronic component and electronic device

US11114245B2 · kind B2 · utility

0Cited by
3References
18Claims
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Key dates

Filing dateJul 10, 2019
Grant dateSep 7, 2021
Priority date
Expiry dateJul 31, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01G4/232
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A method of manufacturing a ceramic dielectric, including: heat-treating a barium precursor or a strontium precursor, a titanium precursor, and a donor element precursor to obtain a conducting or semiconducting oxide, preparing a mixture including the conducting or semiconducting oxide and a liquid-phase acceptor element precursor, and sintering the mixture to form a ceramic dielectric, wherein the ceramic dielectric includes a plurality of grains and a grain boundary between adjacent grains, and wherein the plurality of grains including an insulating oxide comprising an acceptor element derived from the acceptor element precursor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.