Patent · US Active

Hybrid high-voltage low-voltage FinFET device

US11114348B2 · kind B2 · utility

0Cited by

3References

12Claims

0Family size

Assignee

Microsemi SoC Corp. · US

Inventors

John McCollum · Saratoga, US
Fethi Dhaoui · Tracy, US
Pavan Singaraju · San Jose, US

Key dates

Filing date	Nov 1, 2018
Grant date	Sep 7, 2021
Priority date	—
Expiry date	Nov 1, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/853
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated circuit includes a plurality of low-voltage FinFET transistors each having a channel length l and a channel width w, the low-voltage FinFET transistors having a first threshold voltage channel implant and a first gate dielectric thickness. The integrated circuit also includes a plurality of high-voltage FinFET transistors each having the channel length l and the channel width w, the high-voltage FinFET transistors having a second threshold voltage channel implant greater than the first threshold voltage channel implant and second gate dielectric thickness greater than the first gate dielectric thickness.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.