Semiconductor device and method for manufacturing same
US11114527B2 · kind B2 · utility
0Cited by
4References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2020 |
| Grant date | Sep 7, 2021 |
| Priority date | — |
| Expiry date | Mar 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A terrace insulating film (SL) to be overridden by a gate electrode (G) of an nLDMOS device is configured by LOCOS, and a device isolation portion (SS) is configured by STI. Furthermore, on an outermost periphery of an active region where a plurality of nLDMOS devices are formed, a guard ring having the same potential as that of a drain region (D) is provided. And, via this guard ring, the device isolation portion (SS) is formed in a periphery of the active region, thereby not connecting but isolating the terrace insulating film (SL) and the device isolation portion (SS) from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.