Integrated circuit devices and methods of manufacturing the same
US11114535B2 · kind B2 · utility
0Cited by
6References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 5, 2018 |
| Grant date | Sep 7, 2021 |
| Priority date | — |
| Expiry date | Jul 27, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include a substrate including a fin active region extending in a first direction, a gate structure crossing the fin active region and extending in a second direction crossing the first direction, source/drain regions on the fin active region at opposite sides of the gate structure, a first contact structure electrically connected to one of the source/drain regions, a pair of first contact block structures on opposite first sidewalls, respectively, of the first contact structure in the second direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.