Semiconductor structure cutting process and structures formed thereby

US11114549B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Ryan Chia-Jen Chen · Chiayi, TW
• Ming-Ching Chang · Hsinchu, TW
• Yi-Chun Chen · Hsinchu, TW
• Yu-Hsien Lin
• Li-Wei Yin · Hsinchu, TW
• Tzu-Wen Pan · Hsinchu, TW
• Cheng-Chung Chang
• Shao-Hua Hsu · Nanwang, TW

Key dates

• Filing date: Mar 1, 2018
• Grant date: Sep 7, 2021
• Expiry date: Jul 18, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes a liner on a first sidewall of the first fin, and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is further on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin.