Rare-earth ion-doped waveguide amplifiers
US11114815B1 · kind B1 · utility
7Cited by
1References
20Claims
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Key dates
| Filing date | Dec 21, 2017 |
| Grant date | Sep 7, 2021 |
| Priority date | — |
| Expiry date | May 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/021
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and apparatus for a silicon photonics chip and a rare-earth-ion-doped waveguide amplifier chip, wherein the rare-earth ion-doped waveguide amplifier is proximate to and optically coupled to the silicon photonics chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.