Photonic chip passed through by a via

US11114818B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Sylvie Menezo · Voiron, FR
• Severine Cheramy · Grenoble, FR

Key dates

• Filing date: Jun 6, 2019
• Grant date: Sep 7, 2021
• Expiry date: Jun 6, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H29/10
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A photonic chip includes an optical layer bonded, at a bonding interface, to an interconnection layer, the thickness of the optical layer being smaller than 15 μm, a primary via that extends through the interconnection layer solely between a lower face and the bonding interface, an electrical terminal chosen from the group consisting of an electrical contact embedded in the interior of the optical layer and of an electrical track produced on an upper face, a second via that extends the primary via into the interior of the optical layer in order to electrically connect the primary via to the electrical terminal, this secondary via extending in the interior of the optical layer from the bonding interface to the electrical terminal, the maximum diameter of this secondary via being smaller than 3 μm.