Method of synthesizing thickness-controlled graphene through chemical vapor deposition using Cu—Ni thin film laminate
US11117804B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 11, 2018 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Aug 25, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B2204/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a method of synthesizing graphene, wherein a Cu—Ni thin film laminate including a copper thin film and a nickel thin film formed thereon is placed in a chemical vapor depositor, brought into contact with a graphene precursor and subjected to chemical vapor deposition (CVD), thus synthesizing thickness-controlled graphene on the copper thin film, whereby the thickness of multilayer graphene can be easily and reproducibly controlled by adjusting only nickel thickness and CVD time, and a process window for obtaining reproducible results can be widened due to self-limiting properties whereby the maximum thickness of graphene is obtained after a certain synthesis time due to the thickness-controlled nickel thin film. Also, carbon atoms absorbed to the nickel thin film reach the copper thin film opposite thereto through internal diffusion of the metal laminate to thus grow graphene via surface-mediated reaction thereon, thereby improving the uniformity of synthesized graphene.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.