Patent · US Active

Method for depositing protection film of light-emitting element

US11118266B2 · kind B2 · utility

0Cited by
3References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 13, 2018
Grant dateSep 14, 2021
Priority date
Expiry dateNov 20, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/034
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection layer on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection layer on the first protection layer by means of the plasma-enhanced chemical vapor deposition method.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.