Patent · US Active

Stack cap with a non-magnetic layer including ferromagnetic elements

US11120933B1 · kind B1 · utility

0Cited by
22References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 29, 2019
Grant dateSep 14, 2021
Priority date
Expiry dateOct 12, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01F10/3272
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A magnetoresistive sensor includes a free layer and a cap over the free layer. The cap includes an upper layer and an insertion layer between the upper layer and the free layer. The insertion layer includes a non-magnetic alloy formed of at least one refractory metal and at least one ferromagnetic metal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.