Ion beam etching apparatus
US11120975B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2018 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Sep 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3345
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion-beam etching apparatus includes: a plasma chamber configured to generate plasma from process gas in the plasma chamber; at least one plasma valve coupled to the plasma chamber; an ion-beam source in communication with the plasma chamber, wherein the ion-beam source is configured to extract ions from the plasma and generate ion-beams when a bias is applied to the ion-beam source; an etching chamber in communication with the ion-beam source, and configured to accommodate an object to be etched; at least one etching valve coupled to the etching chamber; and at least one exhausting pump connected to either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively, wherein the at least one exhausting pump is configured to receive and exhaust radicals in either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.