Etching using chamber with top plate formed of non-oxygen containing material
US11120986B2 · kind B2 · utility
0Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2019 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Oct 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes etching a first oxide layer in a wafer. The etching is performed in an etcher having a top plate overlapping the wafer, and the top plate is formed of a non-oxygen-containing material. The method further includes etching a nitride layer underlying the first oxide layer in the etcher until a top surface of a second oxide layer underlying the nitride layer is exposed. The wafer is then removed from the etcher, with the top surface of the second oxide layer exposed when the wafer is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.