Method for detecting ultra-small defect on wafer surface
US11121045B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2019 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Nov 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/24
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for detecting an ultra-small defect on a wafer surface, film layer having ultra-small defect that causes abnormalities on the surface of the film layer; form a photoresist pattern with a pattern defect; etching the film layer according to the photoresist pattern to form a film layer pattern with an enlarged defect; and scanning the film layer pattern by using a defect scanner to capture the enlarged defect. In this method, enlarging the size of the ultra-fine particle defect through the exposure defocusing principle; or by adding the photomask consisting of the repeating units, using the repetition pattern as the exposure pattern and combing with the repeating cell to cell comparison method, the capture ability of the detection machine is further improved. Therefore, it can be detected by amplifying the defects of ultrafine particles which cannot be detected by conventional methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.