Patent · US Active

Semiconductor device and method of manufacturing a semiconductor device

US11121077B2 · kind B2 · utility

0Cited by
2References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 10, 2019
Grant dateSep 14, 2021
Priority date
Expiry dateSep 18, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/81815
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In one example, a semiconductor device comprises a substrate comprising a dielectric, a first conductor on a top side of the dielectric, and a second conductor on a bottom side of the dielectric, wherein the dielectric has an aperture, and the first conductor comprises a partial via contacting a pad of the second conductor through the aperture, an electronic device having an interconnect electrically coupled to the first conductor, and an encapsulant on a top side of the substrate contacting a side of the electronic device. Other examples and related methods are also disclosed herein.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.