Semiconductor device and method of manufacturing a semiconductor device
US11121077B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2019 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Sep 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/81815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one example, a semiconductor device comprises a substrate comprising a dielectric, a first conductor on a top side of the dielectric, and a second conductor on a bottom side of the dielectric, wherein the dielectric has an aperture, and the first conductor comprises a partial via contacting a pad of the second conductor through the aperture, an electronic device having an interconnect electrically coupled to the first conductor, and an encapsulant on a top side of the substrate contacting a side of the electronic device. Other examples and related methods are also disclosed herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.