Light pipe structure with high quantum efficiency
US11121162B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2019 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | May 7, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Various embodiments of the present disclosure are directed towards an image sensor including a light pipe structure. A photodetector disposed within a semiconductor substrate. A gate electrode is over the semiconductor substrate and borders the photodetector. An inter-level dielectric (ILD) layer overlies the semiconductor substrate. A conductive contact is disposed within the ILD layer such that a bottom surface of the conductive contact is below a top surface of the gate electrode. The light pipe structure overlies the photodetector such that a bottom surface of the light pipe structure is recessed below a top surface of the conductive contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.