Thin film transistor, pixel structure, display device and manufacturing method
US11121257B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2019 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Feb 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6739
Abstract
The present disclosure provides a thin film transistor, a pixel structure, a display device, and a manufacturing method. The thin film transistor includes: a gate on the substrate; a gate insulating layer covering the gate and the substrate; a first support portion and a second support portion, which are provided on the gate insulating layer covering the substrate and located on both sides of the gate, wherein the first support portion is not connected to the second support portion; a semiconductor layer on the first support portion, the second support portion, and the gate insulating layer covering the gate; and a source and a drain respectively connected to the semiconductor layer. The first support portion and the second support portion are respectively configured to support the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.