Semiconductor substrate
US11121261B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2020 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Feb 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L25/167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate includes a substrate, a first metal oxide semiconductor layer, a first insulating layer, a first conductive layer, a second insulating layer, a second conductive layer, and a second metal oxide semiconductor layer. The first transistor includes a first metal oxide semiconductor pattern of the first metal oxide semiconductor layer, a first gate of the first conductive layer, a first source of the second conductive layer, and a first drain of the second conductive layer. The second transistor includes a second metal oxide semiconductor pattern of the first metal oxide semiconductor layer, a second gate of the first conductive layer, a second source of the second conductive layer, a second drain of the second conductive layer, and a third metal oxide semiconductor pattern of the second metal oxide semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.