Self-bypass diode function for gallium arsenide photovoltaic devices
US11121272B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2019 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Feb 15, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide and an emitter layer. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect. The absorber or base layer has a grading in doping concentration from a first doping level closest to the emitter layer to a second doping level away from the emitter layer, the second doping level being greater than the first doping level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.