Patent · US Active

Method of adapting light extraction from a light emitting diode

US11121295B2 · kind B2 · utility

1Cited by

1References

11Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Anis DAAMI · Grenoble, FR
Marianne Consonni · Grenoble, FR

Key dates

Filing date	Dec 4, 2019
Grant date	Sep 14, 2021
Priority date	—
Expiry date	Dec 4, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/0363

Abstract

A method of adapting light extraction LEE from at least one light emitting diode with surface area S and perimeter P includes a step to encapsulate the light emitting diode with an encapsulation layer with a refraction index N, the refraction index N being determined based on a model taking account of an internal quantum efficiency of the light emitting diode. The extraction of light resulting from use of the encapsulation layer is such that the light emitting diode can achieve a predetermined external quantum efficiency.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.