3D graphene transistor
US11121334B2 · kind B2 · utility
0Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2015 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Feb 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/118
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A field effect transistor having a channel that comprises three-dimensional graphene foam. The subject matter of the invention concerns a three dimensional field-effect transistor having a channel based on graphene foam and the use of ionic liquid as a gate. The graphene foam is made of a three-dimensional network of single and double layer graphene that extends in all the three dimensions. Metal contacts on either end of the graphene foam form the drain and source contacts of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.