Quantum dot material, preparation method, and semiconductor device
US11121338B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2017 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | May 24, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention provides a QD material, a preparation method, and a semiconductor device. The QD material includes at least one QD structural unit arranged sequentially along a radial direction of the QD material. Each QD structural unit has a gradient alloy composition structure with a changing energy level width along the radial direction or a homogeneous alloy composition structure with a constant energy level width along the radial direction. The disclosed QD material not only achieves higher light-emission efficiency of QD material, but also meets the comprehensive requirements of semiconductor devices and the corresponding display technologies on QD materials. Therefore, the disclosed QD material is a desired QD light-emitting material suitable for semiconductor devices and display technologies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.