Application structure of gallium nitride field-effect transistor in dimmer circuit
US11122656B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2020 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Jul 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B45/59
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An application structure of a gallium nitride field-effect transistor in a dimmer circuit is disclosed, including an LED module, a power supply circuit, a current holding circuit, and a drive circuit. The power supply circuit includes a power supply, a dimmer unit, and a rectifier circuit. The current holding circuit is electrically connected to the rectifier circuit, includes a first control switch, a capacitor capable of charging and discharging, and a plurality of resistors whose current is set, and is configured to provide a stable current to the dimmer unit. The first control switch is provided with a gallium nitride field-effect transistor. The drive circuit is electrically connected to the current holding circuit, includes a second control switch, a screen flicker prevention chip electrically connected to the LED module, and a plurality of resistors whose current is set, and is configured to stably drive the LED module to emit light. The second control switch is provided with a gallium nitride field-effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.