Ray detector, method for manufacturing the same and electronic device
US11125894B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 8, 2019 |
| Grant date | Sep 21, 2021 |
| Priority date | — |
| Expiry date | Oct 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A ray detector includes a base substrate including a plurality of pixel regions arranged in an array. Each pixel region includes a thin film transistor including a source and a drain, and a photoelectric sensor on the thin film transistor. The photoelectric sensor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer on the first electrode and the second electrode and covering the first electrode and the second electrode, and a first semiconductor layer on the dielectric layer. The first electrode is electrically connected to the drain. A distance between a surface of the first electrode away from the base substrate and the base substrate is a first distance. A distance between a surface of the second electrode away from the base substrate and the base substrate is a second distance. The first distance is substantially equal to the second distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.