Patent · US Active

Electro-optically active device

US11126020B2 · kind B2 · utility

3Cited by

19References

27Claims

0Family size

Assignee

Rockley Photonics Limited · GB

Inventors

Guomin Yu · Glendora, US
Yi Zhang · Pasadena, US
Aaron John Zilkie · Pasadena, US

Key dates

Filing date	May 11, 2018
Grant date	Sep 21, 2021
Priority date	—
Expiry date	May 11, 2038

Classification

Technology area (CPC G)Physics
CPC primaryG02F2202/108
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A silicon based electro-optically active device and method of producing the same. The silicon based electro-optically active device comprising: a silicon-on-insulator (SOI) waveguide; an electro-optically active waveguide including an electro-optically active stack within a cavity of the SOI waveguide; and a lined channel between the electro-optically active stack and the SOI waveguide, the lined channel comprising a liner; wherein the lined channel is filled with a filling material with a refractive index similar to that of a material forming a sidewall of the cavity, to thereby form a bridge-waveguide in the channel between the SOI waveguide and the electro-optically active stack.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.