Semiconductor optical modulation element
US11126058B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2017 |
| Grant date | Sep 21, 2021 |
| Priority date | — |
| Expiry date | Nov 21, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/025
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a highly reliable, high-speed, and low-loss semiconductor optical modulation element that protects a pin junction structure in a modulation region against reverse voltage ESD by configuring an additional capacity having a thyristor structure between a plurality of feeding pad electrodes. An n-type contact layer, an n-type cladding layer, a non-doped core/cladding layer, a p-type cladding layer, and a p-type contact layer are sequentially laminated on the substrate surface. A Mach-Zehnder interferometric waveguide and a plurality of feeding pad installation sections are formed by dry etching. The n-type contact layer and the n-type cladding layer are removed except for a modulation region of the Mach-Zehnder interferometric waveguide and a feeding region in which the feeding pad installation sections are formed so that the modulation region and the semiconductor of the lower part of the feeding region are electrically isolated from each other. The feeding pads are formed on the common n-type contact layer and n-type cladding layer. A thyristor structure of a pinip junction is formed between the feeding pads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.